| Углов В.В. | Анищик В.М. | Данилович Ю.А. | Шепелевич В.Г. | Дорожкин Н.Н. | Поляк Н.И. | Черенда Н.Н. | Шиманский В.И. | Злоцкий С.В. | Баран Л.В. | Кулешов А.К. | Русальский Д.П. |
Фотография

Дорожкин Николай Николаевич

Занимаемая должность:доцент
Степень, ученое звание:кандидат физ.-мат. наук, доцент
Контактная информация: :комната 153   телефон 2095590     e-mail dorozhkin@bsu.by
Читаемые курсы:Основы кристаллографии

Физика твердого тела

Основы теории твердого тела

Компьютерное моделирование физических процессов
Научная работа:Электронная структура твердых тел

Компьютерное моделирование
Основные публикации:1. Anishchik, V. M. Electronic structure of TiB2 and ZrB2 / V. M. Anishchik, N. N. Dorozhkin // Phys. Stat. Sol. (b). – 1990. – Vol. 160. – No. 1. – P. 173-177.

2. Filonov, A. B. Semiconducting Properties of Hexagonal Chromium, Molybdenum, and Tungsten Disilicides / A. B. Filonov, I. E. Tralle, N. N. Dorozhkin, D. B. Migas, V. L. Shaposhnikov, G. V. Petrov, V. M. Anishchik, V. E. Borisenko // Phys.Stat.Sol. (B), 1994, v. 186, p. 209-215.

3. Novysh, B. V. Matrix elements of the electron-phonon interaction in the Fourier-based representation of the crystal potential / B. V. Novysh, E. M. Gololobov, N. N. Dorozhkin. // Phys.Stat.Sol. (b), 1994, v. 183, № 2, p. 383-393.

4. Novysh, B. V. Matrix elements of the electron-phonon interaction in the rigid electron density displacement approximation / B. V. Novysh, N. N. Dorozhkin, E. M. Gololobov, V. M. Anishchik // Phys.Stat.Sol. (b), 1996, v. 195, № 1, p. 209-216.

5. Filonov, A.B. Electronic and related properties of crystalline semiconducting iron disilicide / Filonov, A.B., Migas, D. B. Shaposhnikov, V. L. Dorozhkin, N. N. Petrov, G. V. Borisenko, V.E. Henrion, W. Lange, H. // J. of Applied Physics, 1996, v. 79, p. 7708-7712.

6. Filonov, A.B. Electronic properties of osmium disilicide / A. B. Filonov, D. B. Migas, V. L. Shaposhnikov, N. N. Dorozhkin, V. E. Borisenko, and H. Lange // Appl. Phys. Lett. –1997-. V. 70, № 3, p. 976-977.

7. Novysh, B. V. Calculation of electron-ion interaction-potential components linear and quadratic in the ion displacements for YBa2Cu3O7 / B. V. Novysh, N. N. Dorozhkin, E. M. Gololobov and V. M. Anishchik // Phys. Solid. State.-1997.-v. 39, № 8.-p.1174-1177.

8. Filonov, A.B. Electronic properties of isostructural ruthenium and osmium silicides and germanides / A. B. Filonov, D. B. Migas, V. L. Shaposhnikov, N. N. Dorozhkin, and V. E. Borisenko, H. Lange, A. Heinrich // Physical Review B. –1999.-v. 60.-№ 24.-p.16494-16498.

9. Sobczak E. Multiple scattering calculations of Fe K EXAFS for Fe surfaces and nanocrystals / Sobczak E., Dorozhkin N.N. // J. of Alloys and Compounds.-1999.-v. 286. №5.-p.108-113.

10. Sobczak E. X-ray absorbption studies of Fe-based nanocrystalline alloys / E. Sobczak, Y. Swilem, N.N. Dorozhkin, R. Nietubyć, P. Dłużewski, A. Ślawska-Waniewska // J. of Alloys and Compounds.-2001.-v. 321. №1-2, 4. -p.57-63.

11. Dorozhkin, N. N. Kinetic theory of conductivity for Fe-containing nanostructured Langmuir-Blodgett thin films / N. N. Dorozhkin; A. I. Drapeza; H. V. Grushevskaya; G. G. Krylov // Proceedings of the SPIE. – 2004. Vol. 5509. – P. 194-205.

12. Migas, D. B. New semiconducting silicide Ca3Si4. / D B Migas, V L Shaposhnikov, A B Filonov, N N Dorozhkin and V E Borisenko. // J. Phys.: Condens. Matter. – 2007. – Vol. 19. – P. 346207-346214.

13. Migas, D. B. Electronic and optical properties of Ir3Si5 / D B Migas, V L Shaposhnikov, V. N. Rodin, N.N. Dorozhkin and V. E. Borisenko // Phys. Stat. Sol. (b). – 2007. – Vol. 244. – No. 9. – P. 3178-3182.

14. Migas, D. B. Ab initio study of the band structures of different phases of higher manganese silicides / D. B. Migas, V. L. Shaposhnikov, A. B. Filonov, V. E. Borisenko and N. N. Dorozhkin. // Phys. Rev. B. – 2008. – Vol. 77. – P. 075205- 075214.

15. Gusakov, V.E. Effect of Hydrostatic Pressure on Self-interstitial Diffusion in Si, Ge, Si Crystals: Quantum-chemical Simulations / Gusakov V.E., Belko V.I., Dorozhkin N.N. // Solid State Phenomena . – 2008. – Vol. 131-133 .– P. 271-275.

16. Shaposhnikov, V.L. Features of the band structure for semiconducting iron, ruthenium, and osmium monosilicides / V.L. Shaposhnikov, D.B. Migas, V.E. Borisenko, N. N. Dorozhkin // Semiconductors. –2009. –V. 43. – № 2. –P. 142-144.

17. Gusakov, V.E. V.E. Formation and Diffusion of Self-Interstitial Atoms in Silicon Crystals under Hydrostatic Pressure: Quantum-Chemical Simulation / V.E. Gusakov, V.I. Belko, N.N. Dorozhkin // J. of surface investigation-X-ray, synchrotron and neutron thecniques. –2009. – V. 3. – № 4. –P. 634-638.

18. Gusakov, V. Formation of Frenkel pairs and diffusion of self-interstitial in Si under normal and hydrostatic pressure: Quantumchemical simulation / V. Gusakov, V. Belko, N. Dorozhkin // Physica B: Condensed Matter. – 2009. – P. 4558-4560.