
The Department of Semiconductor Physics and Nanoelectronics is the unique department that provides training for highly qualified specialists in the development of new materials and technologies for the component base of micro-, nano-, and optoelectronics; computer modeling of physical processes in semiconductors and device structures; 3D design and programming of microcontroller systems; and physics and electromechanics of carbon materials. The intellectual potential and high qualifications of the department's lecturers and employees enable graduates to be in demand at research and educational institutions worldwide, as well as in manufacturing, working with complex technological and control and measuring equipment.
Creation Date
1966
Specialization
"Physics of Nanomaterials and Nanotechnology",
"Fundamental Physics",
"Computer Physics".
Department Staff, 2025

Number of Lecturers
9, including 3 professors и 5 associate professors
Directions of Training
University-Qualified Specialists in:
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1-31 04 07 "Physics of Nanomaterials and Nanotechnology"
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1-31 04 08 "Computer Physics"
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7-07-0533-01 "Fundamental Physics"
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6-05-0533-04 "Computer Physics"
Masters in:
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1-31 80 20 "Applied Physics", "Functional Materials" profile
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7-06-0113-04 "Physics and Mathematics Education", "Physics and Astronomy" profile
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7-06-0533-02 "Applied Physics", "Physical Materials Science" profile
Highly Qualified Researchers in:
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01.04.07 "Condensed Matter Physics"
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01.04.10 "Semiconductor Physics"
Main Places of Employment for Graduates
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Joint Stock Company INTEGRAL – Holding Management Company INTEGRAL
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State Scientific and Production Association "Scientific and Practical Materials Research Centre of the National Academy of Sciences of Belarus"
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Joint Stock Company "Minsk Research Institute of Radiomaterials"
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State Scientific and Production Association "Optics, Optoelectronics and Laser Technology"
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Joint Stock Company "Planar"
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Residents of Belarus High Tech Park
Main International Partners
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Ioffe Institute, St. Petersburg, Russian Federation
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Ruhr University Bochum, Bochum, Germany
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Lublin University of Technology, Lublin, Poland
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National University of Mongolia, Ulaanbaatar, Mongolia
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Duy Tan University (DTU), Da Nang, Vietnam
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Tashkent State Technical University named after Islam Karimov, Tashkent, Uzbekistan
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Institute of Research and Development of High Technology, Duy Tan University, Da Nang, Vietnam
Branches of the Department
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Joint Stock Company INTEGRAL – Holding Management Company INTEGRAL
Educational Process and Scientific Activities
The Department's structure includes 4 research laboratories:
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Semiconductor Physics and Engineering Research Laboratory (the Head — Candidate of Physical and Mathematical Sciences, Associate Professor Igor I. Azarko)
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Electronic Materials Physics Research Laboratory (the Head — Candidate of Physical and Mathematical Sciences, Associate Professor, Coordinator of the Research and Education Center for Nanomaterials and Nanotechnologies of the Belarusian State University Vitaly K. Ksenevich)
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Semiconductor Spectroscopy Research Laboratory (the Head — Candidate of Physical and Mathematical Sciences, Associate Professor Vladislav S. Prosolovich)
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Student Research Laboratory of Nanostructured Semiconductor Physics (the Head — Doctor of Physical and Mathematical Sciences, Professor Mikhail G. Lukashevich)
More detailed information information about the Department you can also find from the presentation (in Russian).
KEY PUBLICATIONS
2025:
Scientific Articles:
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Formation and depth distribution of optically active centers in diamond implanted with high energy xenon ions / N.M. Kazuchits, V.N. Kazuchits, O.V. Korolik, M.S. Rusetsky, V.A. Skuratov, A.M. Zaitsev // Diamond and Related Materials. – 2025. – Vol. 151. – 111837. (Q1)
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Raman activity, piezoelectric response, and carrier mobility in two-dimensional Janus TiGeZ3H (Z = N, P, As) semiconductors: A first-principles prediction / A.I. Kartamyshev, N.N. Hieu, N.A. Poklonski, N.V. Hieu, T.V. Vu, A.A. Lavrentyev, H.V. Phuc // Mater. Sci. Semicond. Process. – 2025. – Vol. 187. – 109102. (Q1)
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Carbon nanoscroll-based memory cell / A.I. Siahlo, S.A. Vyrko, A.M. Popov, N.A. Poklonski, Yu.E. Lozovik // Curr. Appl. Phys. – 2025. – Vol. 71. – P. 99-105. (Q2)
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Restriction of macroscopic structural superlubricity due to structure relaxation by the example of twisted graphene bilayer / A.S. Minkin, I.V. Lebedeva, A.M. Popov, S.A. Vyrko, N.A. Poklonski, Yu.E. Lozovik // Phys. Rev. Materials. – 2025. – Vol. 9. – 024002. (Q1)
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Clustering effects of spin radicals on superparamagnetism: calculation for diamond with radiation-induced defects / N.A. Poklonski, S.A. Vyrko, A.G. Zabrodskii // Phys. Scripta. – 2025. – Vol. 100. – 125914. (Q2)
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Calculation of the activation energy of electrical ε2-conductivity of weakly compensated semiconductors / N.A. Poklonski, I.I. Anikeev, S.A. Vyrko, A.G. Zabrodskii // Phys. Status Solidi B. – 2025. – Vol. 262. – 2400178. (Q3)
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Activation energy of DC hopping conductivity of lightly doped weakly compensated crystalline semiconductors / N.A. Poklonski, I.I. Anikeev, S.A. Vyrko, A.G. Zabrodskii // Phys. Status Solidi B. – 2025. – Vol. 262. – 2400132. (Q3)
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Ferrites of cobalt and cobalt-zinc for magnetorheological materials: Preparation and properties / Yu. S. Haiduk, E.G. Petrova, J.A. Fedotova, N.M. Lapchuk, A.A. Kharchanka, E.V. Korobko, A.E. Usenka, V.V. Pankov / Next Materials. – 2025. – Vol. 8. – 100652. (Q1)
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New insights into detonation synthesis and properties of nanodiamonds / V.Yu. Dolmatov, N.M. Lapchuk, M.A. Blinova, V.T. Senyut, S.D. Pisarevsky, A.V. Nozhkina, A.P. Ershov // J. of Advanced Materials and Technologies. – 2025. – Vol. 10. – P. 65-89.
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Gas-sensing properties of In2O3-Au sensors as a function of gold particle size and method of their synthesis / М. Ivanovskaya, E. Ovodok, I. Azarko, M. Micusik // Microchemical Journal. – 2025. – Vol. 209. – 112676. (Q1)
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The influence of γ-irradiation on the electrophysical parameters of nickel-doped silicon grown by the Czochralski method / Kh. M. Iliev, K.A. Ismailov, V.B. Odzhaev, V.S. Prosolovich, Yu.N. Yankovsky, Z.T. Kenzhaev, B.O. Isakov, G.A. Kushiev // Surface Engineering and Applied Electrochemistry. – 2025. – Vol. 61. – P. 855-860. (Q3)
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Engineering NV centers via hydrogen-driven defect chemistry in CVD diamonds for quantum applications: NVHx dissociations into NV, origin of 468 nm center, and cause of brown coloration / Mansoor Mubashir, K. Czelej, S.E. Magaña, Mansoor Mehya, R. Salci, Mansoor Maryam, T. Linzmeyer, Y. Sorkhe, K.S. Moe, Ö. Özyildirim, K. Kitajima, M.A. Sarsil, T. Erol, G. Hamamci, O. Ergen, A. Kurt, A.A. Akhavan, Z. Er, S. Rubanov, N.M. Kazuchits, A. Gokce, N. Davies, S. Timur, S. Prawer, A.M. Zaitsev, M. Ürgen / arXiv preprint arXiv:2507.00300. – 2025.
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Radiation-Induced processes in electron-irradiated films of negative phenol-formaldehyde photoresist on silicon / D.I. Brinkevich, E.V. Grinyuk, S.D. Brinkevich, V.S. Prosolovich, Yu.N. Yankovskii, V.V. Kolos, O.A. Zubova, S.B. Lastovskii // Surface Engineering and Applied Electrochemistry. – 2025. – Vol. 61. – P.130-135. (Q3)
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AZ nLOF series of photoresist films on monocrystalline silicon / D.I. Brinkevich, E.V. Grinyuk, V.S. Prosolovich, O.A. Zubova, V.V. Kolos, S.D. Brinkevich, S.A. Vabishchevich // Russian Microelectronics. – 2025. – Vol. 54. – P. 1-7. (Q4)
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Stabilizing treatment of negative photoresist films of the AZ nLOF20xx series on silicon / V.S. Prosolovich, D.I. Brinkevich, E.V. Grinyuk, Yu.N. Yankovskii, O.A. Zubova, S.D. Brinkevich, S.A. Vabishchevich // Russian Microelectronics. – 2025. – Vol. 54. – P. 589-594. (Q4)
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Current scientific research on electrostatic accelerator EG-5 in JINR / A.S. Doroshkevich, E.R.C. Lomeli, E.P. González, V.K. Ksenevich [et al.] // EPJ Web Conf. – 2025. – Vol. 333. – P. 03002.
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Effect of the oxidative annealing temperature on the structural and optical characteristics of tin oxide films / V.K. Ksenevich, V.A. Dorosinets, M.A. Samarina, D.V. Adamchuk, G. Abdurakhmanov, H. Liu // Journal of Applied Spectroscopy. – 2025. – Vol. 91. – P. 1233-1239. (Q4)
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Disordered tin oxide films for thermoelectric applications: correlation between microstructure, electrical conductivity and Seebeck coefficient / V.K. Ksenevich, V.A. Dorosinets, M.A. Samarina, N.A. Poklonski, I.A. Svito, D.V. Adamchuk, G. Abdurakhmanov // Приборы и методы измерений. – 2025. – Т. 16, № 2. – С. 87-97. (Q4)
2024:
Scientific Articles:
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Fourier-IR spectroscopy of photoresist/silicon structures for explosive lithography / D.I. Brinkevich, E.V. Grinyuk, S.D. Brinkevich, V.S. Prosolovich, V.V. Kolos, O.A. Zubova, S.B. Lastovskii // Journal of Applied Spectroscopy. – 2024. – V. 90, No. 6. – P.1223-1228. (Q4)
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Optical Characteristics of CdTe Films Deposited on Different Substrates by Thermal Evaporation in a Quasi-Closed Volume / M.G. Lukashevich, A.T. Akobirova, V.I. Golovchuk, A.V. Mudryi, N.S. Sultonov, V.D. Zhivulko // Journal of Applied Spectroscopy. – 2024. – Vol. 91. – Р.729-733. (Q4)
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IR-fourier spectroscopy of attenuated total internal reflection of polyimide films on single-crystal silicon wafers / V.S. Prosolovich, D.I. Brinkevich, E.V. Grinyuk, D. Brinkevich, V.V. Kolos, O.A. Zubova, S.B. Lastovskii // Journal of Applied Spectroscopy. ‒2024. ‒ Vol. 91, No. 2. ‒ P. 302-306. (Q4)
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Carbon nanobracelets / S.A. Vyrko, Yu.G. Polynskaya, N.A. Matsokin, A.M. Popov, A.A. Knizhnik, N.A. Poklonski, Yu.E. Lozovik // Chem. Phys. Lett. – 2024. – Vol. 835. – P. 140999. (Q2)
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Two-dimensional Janus Si2OX (X = S, Se, Te) monolayers as auxetic semiconductors: theoretical prediction / N.P.Q. Anh, N.A. Poklonski, V.T.T. Vi, C.Q. Nguyen, N.N. Hieu // RSC Adv. – 2024. – Vol. 14. – P. 4966-4974. (Q1)
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Two-photon absorption in quantum dots with Hellmann potential / N.N. Hieu, L. Dinh, N.A. Poklonski, H.P.T. Hai, H.V. Phuc // Phys. Scripta. – 2024. – Vol. 99. – P. 0659a9. (Q2)
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Activation energy of DC hopping conductivity of lightly doped weakly compensated crystalline semiconductors / N.A. Poklonski, I.I. Anikeev, S.A. Vyrko, A.G. Zabrodskii // Phys. Status Solidi B. – 2024. – Vol. 262. – P. 2400132. (Q3)
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Calculation of the activation energy of electrical ε2-conductivity of weakly compensated semiconductors / N.A. Poklonski, I.I. Anikeev, S.A. Vyrko, A.G. Zabrodskii // Phys. Status Solidi B. – 2024. – Vol. 262. – P. 2400178. (Q3)
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Magnetic and electronic properties of 1D hybrid nanoobjects composed of alternating polycyclic hydrocarbon regions and double carbon chains / I.V. Lebedeva, S.A. Vyrko, A.S. Sinitsa, S.V. Ratkevich, A.M. Popov, A.A. Knizhnik, N.A. Poklonski, Yu.E. Lozovik // Comput. Theor. Chem. – 2024. – Vol. 1241. – P. 114913. (Q2)
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Influence of Nickel Impurity on the Operating Parameters of a Silicon Solar Cell / Z.T. Kenzhaev, N.F. Zikrillaev, V.B. Odzhaev, K.A. Ismailov, V.S. Prosolovich, Kh.F. Zikrillaev, S.V. Koveshnikov // Russian Microelectronics. – 2024. – Vol. 53. – P. 105-116. (Q4)
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Adhesion of Electron-Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon / S.A. Vabishchevich, N.V. Vabishchevich, S.D. Brinkevich, D.I. Brinkevich, V.S. Prosolovich, S.B. Lastovskii // High Energy Chemistry. – 2024. – Vol. 58, No. 1. – P. 112-119. (Q4)
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Formation and depth distribution of optically active centers in diamond implanted with high energy xenon ions / N.M. Kazuchits, V.N. Kazuchits, O.V. Korolik, M.S. Rusetsky, V.A. Skuratov, A.M. Zaitsev // Diamond & Related Materials. – 2025. – Vol. 151. – 111837. (Q2)
Scientific Articles:
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Interlayer interaction, shear vibrational mode, and tribological properties of two-dimensional bilayers with a commensurate moiré pattern / A.S. Minkin, I.V. Lebedeva, A.M. Popov, S.A. Vyrko, N.A. Poklonski, Yu.E. Lozovik // Phys. Rev. B. – 2023. – Vol. 108, № 8. – P. 085411 (1–9).
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Structural, electronic, and transport properties of Janus XMoSiP2(X = S, Se, Te) monolayers: a first-principles study / N.T. Hiep, C.Q. Nguyen, N.A. Poklonski, C.A. Duque, H.V. Phuc, D.V. Lu, N.N. Hieu // J. Phys. D: Appl. Phys. – 2023. – Vol. 56, № 38. – P. 385306 (1–13).
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Expansion of nanotube cap due to migration of sp atoms from lateral surface / Yu.G. Polynskaya, A.S. Sinitsa, S.A. Vyrko, O. Ori, A.M. Popov, A.A. Knizhnik, N.A. Poklonski, Yu.E. Lozovik // Physica E. – 2023. – Vol. 148. – P. 115624 (1–7).
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DC hopping photoconductivity via three-charge-state point defects in partially disordered semiconductors / N.A. Poklonski, I.I. Anikeev, S.A. Vyrko // Phys. Scr. – 2023. – Vol. 98. – № 1. – P. 015823 (1–11).
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Magnetic and optical properties of natural diamonds with subcritical radiation damage induced by fast neutrons / N.A. Poklonski, A.A. Khomich, I.A. Svito, S.A. Vyrko, O.N. Poklonskaya, A.I. Kovalev, M.V. Kozlova, R.A. Khmelnitskii, A.V. Khomich // Appl. Sci. – 2023. – Vol. 13, № 10. – P. 6221 (1–16).
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Model of DC tunneling conductivity via hydrogen-like impurities in heavily doped compensated semiconductors / N.A. Poklonski, I.I. Anikeev, S.A. Vyrko, A.G. Zabrodskii // Phys. Status Solidi B. – 2023. – Vol. 260, № 4. – P. 2200559 (1–9).
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Robust electronic properties of monolayer BeO against molecule adsorption / H. Liu, Ksenevich, J. Zhao, J. Gao // Phys. Chem. Chem. Phys. – 2023. – Vol. 25, № 12. – P.P. 8853-8860.
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Bismuth oxysulfide thin films for light and humidity sensing / A.V. Mazanik, I.A. Svito, V.K. Ksenevich, E.A. Bondarenko, L.S. Khoroshko, A.I. Kulak, E.A. Streltsov // Thin Solid Films. – 2023. – Vol. 782. – P.P. 140035 (1-8).
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Synthesis of Ti3AlC2max phase under vacuum, its structural characterization and using for Ti3C2Tx MXene preparation / E.A. Ovodok, M.I. Ivanovskaya, S.K. Poznyak, A.M. Maltanova, I.I. Azarko, M. Micusik, M. Omastava, A. Aniskevich// Thin Solid Films – 2023. – V.771. – 139759.
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Xalmurat M Iliyev, Vladimir B Odzhaev, Sobir B Isamov, Bobir O Isakov, Bayrambay K Ismaylov, Kutub S Ayupov, Shahzodbek I Hamrokulov, Sarvinoz O Khasanbaeva. X-ray diffraction and raman spectroscopy analyses of GaSb-enriched Si surface formed by applying diffusion doping technique // East Eur. J. Phys. – 2023 – V.3, P.363-369.
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S. Koval’chuk, S. B. Lastovskii, V. B. Odzhaev, A. N. Petlitskii, V. S. Prosolovich, D. V. Shestovsky, V. Yu. Yavid, Yu. N. Yankovskii. Influence of Structural Defects on the Electrophysical Parameters of PIN-Photodiodes // Russian Microelectronics. – 2023 – V.52, No. 4 – Р.276-282.
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S. Kovalchuk, S. B. Lastovski, V. B. Odzhaev, A. N. Petlitski, V. S. Prosolovich, D. V. Shestovski, V. Yu. Yavid, Yu. N. Yankovski. Electrophysical Parameters of pin-Photodiodes Irradiated with 60Co γ-Quanta // Russian Microelectronics. – 2023 – V.52, No. 6 – Р.504-509.
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A. Kharchenko, D. I. Brinkevich, S. D. Brinkevich, V. S. Prosolovich. Radiation-Induced Alteration of the Reflection Spectra of Diazoquinone–Novolac Photoresist Films by Implantation of Ag+ Ions // High Energy Chemistry, 2023, V. 57, N 6, pp. 498-503.
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Johnson P., Moe K.S., Persaud S., Odake S., Kazuchits, N.M., Zaitsev A.M. Spectroscopic characterization of yellow gem quality CVD diamond. Diamond and Related Materials – 2023. – V. 140. – P. 110505.
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Khort A. High-performance selective NO2gas sensor based on In2O3–graphene–Cu nanocomposites / A. Khort, Y. Haiduk, I. Taratyn, D. Moskovskikh, K. Podbolotov, A. Usenka, N. Lapchuk, V. Pankov // Scientific Reports 13 (1), 7834 (2023/5/15).
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Haiduk Yu.S, Yu.А., Lapchuk N.M., Kharchanka A.A., Usenka A.E., Korobko E.V., Pankov V.V. Structure and physicochemical properties of cobalt and cobalt-zinc ferrites for magnetorheological materials. Condensed Matter and Interphases. 2023; 25(1).
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Inductive type impedance of Mo/n-Si barrier structures irradiated with alpha particles / N.A. Poklonski, A.I. Kovalev, K.V. Usenko, E.A. Ermakova, N.I. Gorbachuk, S.B. Lastovski // Devices and Methods of Measurements. – 2023. – Vol. 14, № 1. – P. 38-43.
2022:
Scientific Articles:
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High-frequency capacitor with working substance “insulator–undoped silicon–insulator” / N.A. Poklonski, I.I. Anikeev, S.A. Vyrko // Devices and Methods of Measurements. – 2022. – Vol. 13. – P. 247-255.
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Dependence of the energy of emission molecular orbitals in short open carbon nanotubes on the electric field / O.B. Tomilin, E.V. Rodionova, E.A. Rodin, N.A. Poklonski, I.I. Anikeev, S.V. Ratkevich // Physics of the Solid State. – 2022. – Vol. 64 – P. 365–370.
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Processes Induced in DLC/Polyimide Structures by Irradiation with 60Co γ-Rays / Kharchenko A.A., Fedotova Yu. A., Zur I.A., Brinkevich D.I., Brinkevich S.D., Grinyuk E.V., Prosolovich V.S., Movchan S.A., Remnev G.E., Linnik S.A., Lastovskii S.B. // High Energy Chemistry. – 2022. – Vol. 56. – P. 354-362.
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Attenuated Total Reflection Spectra of Nitrided SiO2/Si Structures / Odzhaev V.B., Pyatlitski A.N., Prosolovich V.S., Kovalchuk N.S., Soloviev, Ya. A., Zhygulin D.V., Shestovsky D.V., Yankovski, Yu. N. Brinkevich D.I. // Journal of Applied Spectroscopy. – 2022. – Vol. 89. – P. 665-670.
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Ion Implantation in Diazoquinone–Novolac Photoresist / Brinkevich D.I., Brinkevich S.D., Prosolovich V.S. // High Energy Chemistry. – 2022. – Vol. 56. – P. 270-276.
2021:
Scientific Articles:
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Engineering of defects in fast neutron irradiated synthetic diamonds / Khomich A.A., Kovalev A.I., Khmelnitsky R.A., Khomich A.V., Popovich A.F., Ralchenko V.G. // Journal of Physics: Conference Series. – 2021. – Vol. 2103. – 176437.
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Study of color centers in radiation-modified diamonds / Kozlova M.V., Khomich A.A., Khmelnitsky R.A., Averin A.A., Kovalev A.I., Poklonskaya O.N., Vlasov I.I., Khomich A.V., Ralchenko V.G. // Journal of Physics: Conference Series. – 2021. – Vol. 2103. – 176437.
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Multiscale modeling strategy to solve fullerene formation mystery / Popov, A.M., Lebedeva, I.V., Vyrko, S.A., Poklonski, N.A. // Fullerenes Nanotubes and Carbon Nanostructures. – 2021. – in press.
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Effect of Process-Related Impurities on the Electrophysical Parameters of a MOS Transistor / Odzhaev, V.B.,
Petlitskii, A.N., Prosolovich, V.S., Filipenya, V.A., Yavid, V.Y., Yankovskii, Y.N. // Russian Microelectronics. – 2021. – Vol. 50. – P. 63-68. -
Modification of Diazoquinone-Novolac Photoresist Films by the Implantation of Antimony Ions / Brinkevich, S.D., Brinkevich, D.I., Prosolovich, V.S. // Russian Microelectronics. – 2021. – Vol. 50. – P. 33-38.
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Radiation-Induced Processes in Diazoquinone–Novolac Resist Films under Irradiation with 60Co γ-Rays / Brinkevich, S.D., Brinkevich, D.I., Prosolovich, V.S.,
Sverdlov, R.L. // High Energy Chemistry. – 2021. – Vol. 55. – P. 65-74. -
Frustrated Total Internal Reflection Spectra of Diazoquinone–Novolac Photoresist Films / Brinkevich, S.D., Brinkevich, D.I., Prosolovich, V.S., Lastovskii, S.B., Pyatlitski, A.N. // Journal of Applied Spectroscopy. – 2021. – Vol. 87. – P. 1072-1078.
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Rapid HPHT annealing of synthetic IB-TYPE diamonds / V.N. Kazuchits, N.M. Kazuchits, M.S. Rusetskiy, O.V. Korolik, A.V. Konovalova, O.V. Ignatenko // Carbon. – 2021. – Vol. 174. – P. 180–189.
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Luminescence of brown CVD diamond: 468 nm luminescence center / A.M. Zaitsev, N.M. Kazuchits, K.S. Moe, J.E. Butler, O.V. Korolik, M.S. Rusetsky, V.N. Kazuchits // Diamond and Related Materials. – 2021. – Vol. 113. – 108255.
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The phosphate-based composite materials filled with nano-sized BaTiO3 and Fe3O4: Toward the unfired multiferroic materials / Plyushch, A., Macutkevič, J., Sokal, A., Lapko, K., Kudlash, A., Adamchuk, D., Ksenevich, V., Bychanok, D., Selskis, A., Kuzhir, P., Banys, J. // Materials. – 2021. – Vol. 14. – P. 1-8.
2020:
Scientific Articles:
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Nitrogen-doped CVD diamond: Nitrogen concentration, color and internal stress / A.M.Zaitsev, N.M.Kazuchits, V.N.Kazuchits, K.S.Moe, M.S.Rusetsky, O.V.Korolik, Kouki Kitajima, J.E.Butler, W.Wang // Diamond and Related Materials– 2020. – Vol. 105. – P. 107794. (Scopus, WoS, IF2019=2.650).
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Carrier recombination parameters in diamond after surface boron implantation and annealing / P. Grivickas, P. Ščajev, N. Kazuchits, A. Mazanik, O. Korolik, L.F. Voss, A.M. Conway, D.L. Hall, M. Bora, L. Subačius, V. Bikbajevas, V. Grivickas // Journal of Applied Physics (Scopus, WoS, IF2019=2.286). – 2020. – Vol. 127. – P. 245707 (6 p.)
2019:
Scientific Articles:
2018:
Scientific Articles:
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Structure and Dielectric Properties of Bi0.80Gd0.20–xLaxFeO3 Multiferroics / I.I. Makoed, A.F. Ravinski, N.I. Gorbachuk, A.V. Pashchenko, N.A. Liedienov, A.A. Amirov, D.M. Yusupov, and K.I. Janushkevich // Bulletin of the Russian Academy of Sciences: Physics.— 2018.— Vol. 82, No. 5.— P. 570–573 [DOI: 10.3103/S1062873818050210].
2017:
Scientific Articles:
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N.M. Kazuchits, M.S. Rusetsky, V.N. Kazuchits and A.M. Zaitsev. Cathodoluminescence of synthetic diamonds annealed at high temperature without stabilizing pressure // Diamond and Related Materials. – 2017. – Vol. 74. – P. 41-44.
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Non-linear Electrical Conductivity of Carbon Nanotubes/WS2 Nanotubes (Nanoparticles) Hybrid Films / V. K. Ksenevich, N. I. Gorbachuk, Ho Viet, M. V. Shuba, A. G. Paddubskaya, A. D. Wieck // Nonlinear Phenomena in Complex Systems.— 2017.— V. 20, №. 4.— P. 360 – 367. [URL: http://www.j-npcs.org/cgi-bin/test-pdf.php?text=../restricted/v20no4p360.pdf].
2016:
Scientific Articles:
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N.M. Kazuchits, M.S. Rusetsky, V.N. Kazuchits and A.M. Zaitsev. Aggregation of nitrogen in synthetic diamonds annealed at high temperature without stabilizing pressure // Diamond and Related Materials. – 2016. – Vol. 64. – P. 202-207.
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Ksenevich, V.K. Electrical properties of Carbon Nanotubes/WS2 Nanotubes (Nanoparticles) Hybrid Films / Ksenevich V.K., Gorbachuk N.I., Ho Viet, Shuba M.V., Kuzhir P.P., Maksimenko S.A., Paddubskaya A.G., Valusis G., Wieck A.D., Zak A., Tenne R. // Nanosystems: Physics, Chemistry, Mathematics Nanosystems: Physics, Chemistry, Mathematics. — 2016.— V. 7, № 1.— P. 37—43. [DOI: 10.17586/2220-8054-2016-7-1-37-43]
Other Years:
Scientific Articles:
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E. Gaubas, T. Ceponis, D. Meskauskaite, and N. Kazuchits. Profiling of Current Transients in Capacitor Type Diamond Sensors // Sensors. – 2015. – Vol. 15. – P. 13424-13458.
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E. Gaubas, T. Ceponis, A. Jasiunas, V. Kalendra, J. Pavlov, N. Kazuchits, E. Naumchik, M. Rusetsky. Lateral scan profiles of the recombination parameters correlated with distribution of grown-in impurities in HPHT diamond // Diamond and Related Materials. – 2014. – Vol. 47. – P. 15–26.
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Vabishchevich N., Brinkevich D., Volobuev V., Lukashevich M., Prosolovich V., Sidorenko Yu., Odzhaev V., Partyka J. Structure and electron-transport properties of photoresist implanted by Sb+ ions // Acta Physica Polonica A. – 2011. – V.120, № 1. – P.46-48.
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V.K. Ksenevich, N.I. Gorbachuk, T.A Dauzhenka, I.A. Bashmakov, N.A. Poklonski, A.D.Wieck. AC-Conductivity of Thin Polycrystalline Tin Dioxide Films // Acta Physica Polonica A. – 2011. – Vol. 119, № 2. – P.P. 146-147.
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N.A. Poklonski, S.A. Vyrko, E.F. Kislyakov, N.N. Hieu, O.N. Bubel’, A.M. Popov, Yu.E. Lozovik, A.A. Knizhnik, I.V. Lebedeva, N.A. Viet. Effect of Peierls transition in armchair carbon nanotube on dynamical behaviour of encapsulated fullerene // Nanoscale Research Letters.– 2011. (in press).
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V.K. Ksenevich, N.I. Gorbachuk, T.A. Dauzhenka, I.A. Bashmakov, N.A. Poklonski, A.D. Wieck. AC-conductivity of thin polycrystalline tin dioxide films // Acta Physica Polonica A.– 2011.– Vol. 119, No. 2.– P. 146–147. [URL: http://przyrbwn.icm.edu.pl/APP/PDF/119/a119z2p16. pdf].
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N.A. Poklonski, N.I. Gorbachuk, D. Aleinikova. Impedance of Si/SiO2 composites in the vicinity of the percolation threshold // Physics of the Solid State.– 2011.– Vol. 53, No. 3.– P. 462–466.
Academic Disciplines and Courses
Special Courses:
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Materials of Micro- and Nanoelectronics
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Introduction to Semiconductor Physics with the basics of Band Theory
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Electron theory of Semiconductors
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Quasiparticles in Crystals and Low-Dimensional Systems
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Physics of Semiconductor Devices: Non-equilibrium Processes
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Circuit Engineering and Introduction to Microcontroller Systems Engineering
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IC (Integrated Circuit) Manufacturing Technologies
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Programming of Microcontroller Systems
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Physics of Electrically Conductive Polymers
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Trends in the Development of Electronics and Electronic Industry
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Nanotechnology in Electronics
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Spintronics
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Fundamentals of Materials Structure
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Elements of Electronic Circuits and their diagnostics
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Electronic States and Processes in Condensed Matter
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Physics of Electronic Devices: Non-equilibrium Processes
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Fundamentals of Circuit Engineering and Microcontroller Programming
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Statistical Physics of Semiconductors
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Technological Processes in Modern Micro- and Nanoelectronics and Research Methods for Electronic Structures
Faculty-Wide Lecture Courses:
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Introduction to Electronics
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Engineering Graphics
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Methods for Creating Nanostructures and Nanomaterials
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Fundamental Principles of Nanotechnology
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Diagnostic Methods for Nanostructures and Nanomaterials
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Fundamentals of Radio Electronics
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Introduction to Solid-State Electronics
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Experiment Automation
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Digital Electronics
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Symmetry Group Theory
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Physicochemical Fundamentals of Technological Processes
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Modern Methods of Materials Research
Lecture Courses for Master’s Students:
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Modern Problems in Physics
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Management of Research and Development Projects
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Band Theory of Semiconductors
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Kinetic Processes in Semiconductors
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Physics of Nanomaterials
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Intelligent Microcontroller Systems
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Applications of Functional Analysis and Group Theory in Physics
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Management of Educational and Research Projects
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Semiconductor Physics





